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AON2701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AON2701/L uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. AON2701 and AON2701L are electrically identical. -RoHS Compliant -Halogen Free*
DFN 2x2 Package A NC D
Features
VDS (V) = -20V (VGS = -4.5V) ID = -3A RDS(ON) < 120m (VGS = -4.5V) RDS(ON) < 160m (VGS = -2.5V) RDS(ON) < 200m (VGS = -1.8V) SCHOTTKY VKA (V) = 20V, IF = 2A, VF<0.45V@1A
D
A
K
D G S K
Top
K G Bottom
S
Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25C Continuous Drain Current Pulsed Drain Current
B A
MOSFET -20 8 -3 -2.3 -15
Schottky
Units V V A
VGS TA=70C ID IDM VKA TA=25C TA=70C TA=25C IF IFM TA=70C PD TJ, TSTG Symbol RJA
Schottky reverse voltage Continuous Forward CurrentA Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t 10s Maximum Junction-to-AmbientA Maximum Junction-to-Ambient Thermal Characteristics Schottky Maximum Junction-to-AmbientA Maximum Junction-to-Ambient
A A B
20 2.5 1.5 15 1.5 0.95 -55 to 150 Typ 35 65 36 67 1.45 0.92 -55 to 150 Max 45 85 47 87
V A
W C Units C/W
Steady-State t 10s Steady-State
RJA
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON2701
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-20V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-3A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-2.5V, ID=-2.6A VGS=-1.8V, ID=-1.5A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-3A IS=-1A,VGS=0V -0.3 -15 100 135 128 160 6 -0.76 -1 -1.1 540 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 90 63 9.5 5 VGS=-4.5V, VDS=-10V, ID=-3A 1.2 1 5 VGS=-4.5V, VDS=-10V, RL=1.5, RGEN=3 IF=-3A, dI/dt=100A/s 40 28.5 46 21 9.1 0.4 0.45 0.05 10 0.1 20 53 11 2.5 14 pF ns nC 28 13 6.5 700 120 170 160 200 -0.5 Min -20 -1 -5 100 -1 Typ Max Units V nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC V mA mA STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/s IF=1A VR=5V VR=5V, TJ=125C VR=16V VR=16V, TJ=125C VR=10V IF=1A, dI/dt=100A/s IF=1A, dI/dt=100A/s
SCHOTTKY PARAMETERS VF Forward Voltage Drop Irm Irm CT trr Qrr Maximum reverse leakage current Maximum reverse leakage current Junction Capacitance Schottky Reverse Recovery Time Schottky Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 7111 (Oct 15 2007). Rev4: Sep, 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON2701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: MOSFET
15 -4.5V 12 -3.0V 12 25C -ID(A) 9 125C 6 15 VDS=-5V
-ID (A)
9
-2.5V
6
-2.0V
3 VGS=-1.5V 0 0 1 2 3 4 -VDS (Volts) Figure 1: On-Region Characteristics 280 240 RDS(ON) (m ) 200 VGS=-1.8V VGS=-2.5V 160 120 80 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 320 ID=-3A 280 240 200 160 120 80 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C -IS (A) Normalized On-Resistance
3
0 0 1 2 3 4 -VGS(Volts) Figure 2: Transfer Characteristics 1.5 VGS=-1.8V ID=-1.5A VGS=-2.5V ID=-2.6A VGS=-4.5V ID=-3A
1.3
1.1
VGS=-4.5V
0.9
0.7 -50 -25 0 25 50 75 100 125 150 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
-15
1E+01 1E+00
12
RDS(ON) (m ) 1E-01 1E-02 25C 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 125C
25C
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON2701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: MOSFET
5 800 700 Capacitance (pF) 600 500 400 300 200 100 0 0 1 2 3 4 5 6 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss Ciss
VDS=-10V ID=-3A
4 -VGS (Volts)
3
2
1
100.00
TJ(Max)=150C TA=25C 10s 100
10000
TJ(Max)=150C TA=25C
10.00
1000 Power (W)
ID (Amps)
1.00 RDS(ON) limited DC 0.01 0.1 1 10
1ms 10ms 0.1s 10s
100
0.10
10
100
1 0.000001 0.0001
0.01
1
100
10000
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-15 to-Ambient (Note E)
10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=85C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
12
0.1 PD 0.01 Single Pulse 0.001 0.00001 Ton
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON2701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
10 200 160 Capacitance (pF) 125C 120 80 40 0 0 0.2 0.4 0.6 0.8 1 1.2 0 5 10 15 20 VF (V) Figure 12: Schottky Forward Characteristics VKA (Volts) Figure 13: Schottky Capacitance Characteristics
1 IF (Amps)
0.1 25C 0.01
0.001
0.42 0.39 IF=1A 0.36 VF (Volts) 0.33 IF=0.5A 0.30 0.27 0.24 0 25 50 75 100 125 150 Temperature (C) Figure 14: Schottky Forward Drop vs. Junction Temperature
10
Leakage Current (mA)
1
VKA=20V
0.1
VKA=16V
0.01 0 50 75 100 125 Temperature (C) Figure 15: Schottky Leakage Current vs. Junction Temperature 25 150
-15
10 Z JA Normalized Transient Thermal Resistance 1 0.1 0.01 0.001
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=87C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
12
PD Ton Single Pulse
T
0.0001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 16: Schottky Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON2701
Gate Charge Test Circuit & Waveform
Vgs Qg -10V
VDC
VDC
DUT Vgs Ig
Resistive Switching Test Circuit & W aveform s
RL Vds Vgs Vgs Rg D UT
VDC
Vgs Vds
Diode Recovery Test Circuit & W aveform s
Vds + D UT Vgs
t rr
Vds -
Isd Vgs
L
VD C
Ig
Alpha & Omega Semiconductor, Ltd.
+
-
+
Charge
t on td(on) tr t d(off) t off tf
-
+
-
Vds
Qgs
Qgd
Vdd
90%
10%
Q rr = - Idt
-Isd
-I F
dI/dt -I R M Vdd
+ Vdd -Vds
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